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1

Silicon optical sensors fabricated through masked ion implantation

Andrei P. Silard

Journal:

Sensors and Actuators

Year:

1985

Language:

english

File:

PDF, 815 KB

english, 1985

2

Revised theory of linearly-graded silicon junctions: An analytical approach

Andrei P. Silard, Miron J. Duţă

Journal:

Solid-State Electronics

Year:

1991

Language:

english

File:

PDF, 373 KB

english, 1991

3

Electro-optical performance of large-area silicon sensors for radiative energy signals

Andrei P. Silard

Journal:

Sensors and Actuators

Year:

1987

Language:

english

File:

PDF, 807 KB

english, 1987

4

Bifacial, large-area silicon sensors for radiative energy signals

Andrei P. Silard, Gabriel Nani

Journal:

Sensors and Actuators

Year:

1988

Language:

english

File:

PDF, 1.05 MB

english, 1988

5

Effective intrinsic concentration nie in degenerately doped silicon

Silard, Andrei P., Duţă, Miron J.

Journal:

Journal of Applied Physics

Year:

1987

Language:

english

File:

PDF, 486 KB

english, 1987

6

High efficiency, large-area p+-n-n+ silicon solar cells

Andrei Silard, Florin Pera, Gabriel Nani

Journal:

Solid-State Electronics

Year:

1987

Language:

english

File:

PDF, 432 KB

english, 1987

7

Using silicon dioxide as device engineering parameter in the fabrication of photovoltaic cells through masked ion implantation

Andrei P Silard

Journal:

Solar Energy Materials

Year:

1986

Language:

english

File:

PDF, 592 KB

english, 1986

8

Design/technological experiments on low cost, BSF-type, bifacial solar cells fabricated on large-area silicon wafers

Andrei P. Silard, Gabriel Nani

Journal:

Solar Energy Materials

Year:

1988

Language:

english

File:

PDF, 951 KB

english, 1988

9

Performance of n+-p-p+ silicon solar cells fabricated through masked ion implantation

Andrei P. Silard

Journal:

Year:

1985

Language:

english

File:

PDF, 705 KB

english, 1985

10

Development of 60 A, TO-220-packaged, double-interdigitated (TIL) GTO thyristors with enhanced electrothermal reliability

SILARD, ANDREI, ŢURŢUDăU, FLORIAN, KOSA, BARNA

Journal:

International Journal of Electronics

Year:

1986

Language:

english

File:

PDF, 517 KB

english, 1986

11

High-power, TIL-type gate-assisted turn-off thyristors

SILARD, ANDREI, ŢURŢUD[Abreve]U, FLORIAN, M[Abreve]RG[Abreve]RIT, MIHAI

Journal:

International Journal of Electronics

Year:

1986

Language:

english

File:

PDF, 228 KB

english, 1986

12

[IEEE INTELEC '84 - International Telecommunications Energy Conference - New Orleans, LA, USA (1984.11.4-1984.11.7)] INTELEC '84 - International Telecommunications Energy Conference - A 60 A, To-220 - Packaged, Failure-Safed GTO Thyristor

Silard, Andrei P.

Year:

1984

Language:

english

File:

PDF, 8.72 MB

english, 1984

13

[IEEE 1982 International Telephone Energy Conference - Washington, DC, USA (1982.11.26-1982.11.29)] INTELEC '82 - International Telecommunications Energy Conference - Consuming Low Energy in Generation of Power Half-Sine Waves with High Rate of Current Rise

Silard, Andrei, Bodea, Mircea, Kosa, Barna, Niculiu, Adrian

Year:

1982

File:

PDF, 28 KB

1982

14

[IEEE INTELEC '86 - Toronto, Canada (1986.10.19-1986.10.22)] INTELEC '86 - International Telecommunications Energy Conference - High-Efficiency, Large-Area P+-N-N+ Silicon Solar Cells

Silard, Andrei, Pera, Florin, Nani, Gabriel

Year:

1986

Language:

english

File:

PDF, 4.61 MB

english, 1986

15

High-efficiency, low-cost solar cells on 3-inch silicon wafers

SILARD, ANDREI, NANI, GABRIEL

Journal:

International Journal of Electronics

Year:

1988

Language:

english

File:

PDF, 1.33 MB

english, 1988

16

A versatile test-and-drive circuit for GTO thyristors†

SILARD, ANDREI, KOSA, BARNA

Journal:

International Journal of Electronics

Year:

1985

Language:

english

File:

PDF, 170 KB

english, 1985

17

Dynamic behaviour of double-interdigitated (TIL) GTO thyristors under resistive-inductive loads

SILARD, ANDREI, KOSA, BARNA

Journal:

International Journal of Electronics

Year:

1985

Language:

english

File:

PDF, 413 KB

english, 1985

18

Developmental experiments on large-area silicon solar cells

Silard, Andrei P., Nani, Gabriel

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 1023 KB

english, 1989

19

Development of preferentially current-generating silicon solar cells

Silard, Andrei, Pera, Florin, Nani, Gabriel

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 417 KB

english, 1986

20

Investigation of the majority carriers diffusion coefficients behavioural pattern in degenerately-doped silicon

SILARD, ANDREI P., DUŢA, MIRON J.

Journal:

International Journal of Electronics

Year:

1987

Language:

english

File:

PDF, 302 KB

english, 1987

21

Majority-carrier diffusion coefficients in degenerately doped silicon

Silard, Andrei P., Duţă, Miron J.

Journal:

Journal of Applied Physics

Year:

1987

Language:

english

File:

PDF, 513 KB

english, 1987

22

A simple method for achieving immunity to internal noise signals in thyristors

SILARD, ANDREI P.

Journal:

International Journal of Electronics

Year:

1987

Language:

english

File:

PDF, 451 KB

english, 1987

23

Analysis of ‘anomalous’ I- V characteristics of silicon p + -n-n + photodiodes fabricated by boron implant through SiO 2 layers

SILARD, ANDREI P.

Journal:

International Journal of Electronics

Year:

1989

Language:

english

File:

PDF, 317 KB

english, 1989

24

Analysis of electric field distributions in ultra-shallow silicon junctions under thermodynamic equilibrium conditions

SILARD, ANDREI P.

Journal:

International Journal of Electronics

Year:

1987

Language:

english

File:

PDF, 824 KB

english, 1987

25

Analysis of electric fields in very shallow silicon junctions

SILARD, ANDREI P., DUŢ[Abreve], MIRON J.

Journal:

International Journal of Electronics

Year:

1986

Language:

english

File:

PDF, 396 KB

english, 1986

26

Analytical determination of the emitter saturation current in ultra-shallow silicon junctions

SILARD, ANDREI P., DUŢ[Abreve], MIRON J.

Journal:

International Journal of Electronics

Year:

1990

Language:

english

File:

PDF, 468 KB

english, 1990

27

Predicting the surge capability of power thyristors

Silard, Andrei, Bodea, Mircea, Luca, Mihai

Journal:

Electronics Letters

Year:

1980

Language:

english

File:

PDF, 521 KB

english, 1980

28

TILBW Bipolar Power Switching Transistor

Silard, Andrei P., Nani, Gabriel

Journal:

Japanese Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 293 KB

english, 1989

29

Electro-Optical Characteristics of Shallow Silicon Junctions Fabricated Through Masked Ion Implantation

Silard, Andrei P.

Journal:

MRS Proceedings

Year:

1985

Language:

english

File:

PDF, 46 KB

english, 1985

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